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| 1n5391s ? 1n5399s 1.5a silicon rectifier data sheet 2579, rev. ? features diffused junction fast switching for high efficiency high current capability and low forward voltage drop low reverse leakage current surge overload rating to 50 a peak plastic material ? ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: plated leads solderable per mil-std-202, method 208 polarity: cathode band weight: 0.30 grams (approx.) mounting position: any marking: type number maximum ratings and electrical characteristics @t b a b =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol 1n 5391s 1n 5392s 1n 5393s 1n 5395s 1n 5397s 1n 5398s 1n 5399s unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current (note 1) @t b a b = 70c i o 1.5 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 50 a forward voltage @i b f b = 1.5a v fm 1.1 v peak reverse current @t b a b = 25c at rated dc blocking voltage @t b a b = 100c i rm 5.0 50 a typical junction capacitance (note 2) c j 20 pf typical thermal resistance junction to ambient (note 1) r ja 55 k/w operating temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c *glass passivated forms are available upon request note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. sensitron semi c onductor do-41 d i m mi n ma x mi n ma x a 25. 4 ? 1. 000 ? b 4. 06 5. 21 0. 159 0. 205 c 0. 71 0. 864 0. 028 0. 034 d 2. 00 2. 72 0. 079 0. 107 in mm in inc h ? ! ! !! " #$ ? ? % & ' ( & ) * + , , ---. & . / 0 ? 1 2 &% # %3 & . /0 ? 1n5391s ? 1n5399s 1.5a silicon rectifier data sheet 2579, rev. ? sensitron semi c onductor 0.01 0.1 1.0 10 0.6 0 .8 1.0 1 .2 1.4 1 .6 i , inst ant a ne o us f o r w ard c urrent (a) f v , insta n ta neous for w a rd volta ge (v) f fig. 2 t ypical forward characteristics t= 2 5 c j 25 50 75 100 125 150 175 t a mbient temperat u re (oc) a fi g . 1 , forward current deratin g curve i , a verage for w ard rectified current ( a ) (a v) 0 0.5 1.0 1.5 1.0 10 100 1.0 1 0 100 c , c ap a c it an c e ( pf ) j v , reverse volt age (v) r fig. 4 t ypical junction cap acit ance t= 2 5 c j f = 1mhz 1.0 10 100 0 10 20 30 40 50 number of cycles a t 60hz fig. 3 maximum n on-repetitive peak forward surge current i , peak f o r w ard surge current (a) fsm 8.3 ms single half sine-wa v e (jedec method) ? ! ! !! " #$ ? ? % & ' ( & ) * + , , ---. & . / 0 ? 1 2 &% # %3 & . /0 ? ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices t hat feature assured safety o r by means of users? fail-safe prec autions or other arrangement. 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations. |
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